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DISCRETE SEMICONDUCTORS
DATA SHEET
PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors
Product specification Supersedes data of November 1994 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistors
FEATURES * Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR * Interdigitated structure provides high emitter efficiency * Multicell geometry gives good balance of dissipated power and low thermal resistance * Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability. APPLICATIONS Common-base, class B power amplifiers up to 4.2 GHz. DESCRIPTION
olumns
PTB32001X; PTB32003X; PTB32005X
PINNING - SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
1 c
b
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.
Top view
3 2
MAM131
e
MARKING TYPE NUMBER PTB32001X PTB32003X PTB32005X MARKING CODE 3201X 3203X 3205X Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common-base class B circuit. TYPE NUMBER PTB32001X PTB32003X PTB32005X MODE OF OPERATION CW CW CW 3 3 3 f (GHz) 24 24 24 VCC (V) PL (W) 1.3 2.5 4.5 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 8 8 8 Gpo (dB) C (%) 35 35 35 Zi () 15 + j31 5.5 + j29 2.8 + j20 ZL () 5.5 + j10 5 - j2.2 4 - j7
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) PTB32001X PTB32003X PTB32005X Ptot total power dissipation PTB32001X PTB32003X PTB32005X Tstg Tj Tsld Note 1. Up to 0.3 mm from ceramic. storage temperature range operating junction temperature soldering temperature t 10 s; note 1
PTB32001X; PTB32003X; PTB32005X
CONDITIONS open emitter open base RBE = 0 open collector - - - - - - - Tmb 75 C; f > 1 MHz - - -
MIN.
MAX. 40 15 40 3.0 0.25 0.5 0.75 4.2 7.6 8.7 +200 200 235 V V V V A A A
UNIT
W W W C C C
-65 - -
handbook, halfpage
6
MLC091
handbook, halfpage
10
MLC092
Ptot (W)
Ptot (W)
4
5
2
0
-50
0 0 50 100 150 200 Tmb (oC) 50 0 50 100 150 200 Tmb (oC)
f > 1 MHz.
f > 1 MHz.
Fig.2
Power derating curve; PTB32001X.
Fig.3
Power derating curve; PTB32003X.
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistors
PTB32001X; PTB32003X; PTB32005X
handbook, halfpage
10
MLC093
Ptot (W)
5
0 -50
0
50
100
150 200 Tmb (oC)
f > 1 MHz.
Fig.4
Power derating curve; PTB32005X.
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PTB32001X PTB32003X PTB32005X Rth mb-h Note 1. See "Mounting recommendations in the General part of handbook SC19a". thermal resistance from mounting base to heatsink Tj = 75 C; note 1 PARAMETER thermal resistance from junction to mounting base CONDITIONS Tj = 75 C 22 12 10.5 0.7 K/W K/W K/W K/W MAX. UNIT
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistors
CHARACTERISTICS Tmb = 25 C unless otherwise specified. SYMBOL V(BR)CBO PARAMETER collector-base breakdown voltage PTB32001X PTB32003X PTB32005X V(BR)CES ICBO collector cut-off current PTB32001X PTB32003X PTB32005X IEBO emitter cut-off current PTB32001X PTB32003X PTB32005X Ccb collector-base capacitance PTB32001X PTB32003X PTB32005X Cce collector-emitter capacitance PTB32001X PTB32003X PTB32005X IE = IC = 0; VCB = 24 V; VEB = 1.5 V; f = 1 MHz IE = IC = 0; VCB = 24 V; VEB = 1.5 V; f = 1 MHz IE = IC = 0; VCB = 24 V; VEB = 1.5 V; f = 1 MHz IE = IC = 0; VCB = 24 V; VEB = 1.5 V; f = 1 MHz IE = IC = 0; VCB = 24 V; VEB = 1.5 V; f = 1 MHz IE = IC = 0; VCB = 24 V; VEB = 1.5 V; f = 1 MHz VEB = 1.5 V; IC = 0 VEB = 1.5 V; IC = 0 VEB = 1.5 V; IC = 0 VCE = 24 V; IE = 0 VCE = 24 V; IE = 0 VCE = 24 V; IE = 0 IC = 1 mA; IE = 0 IC = 2 mA; IE = 0 IC = 3 mA; IE = 0 CONDITIONS
PTB32001X; PTB32003X; PTB32005X
MIN. 40 40 40 40 - - - - - - - - -
TYP. - - - - - - - - - - 2.2 3 3.8
MAX. - - - - 10 20 30 0.2 0.4 0.6 - - -
UNIT V V V V A A A A A A pF pF pF
collector-emitter breakdown voltage IC = 10 mA; RBE = 0
- - -
0.3 0.6 0.9
- - -
pF pF pF
APPLICATION INFORMATION Microwave performance in a common-base class B selective amplifier circuit; see note 1. MODE OF OPERATION Class B (CW) TYPE NUMBER PTB32001X PTB32003X PTB32005X Note 1. Circuit consists of prematching circuit board in combination with complementary input and output slug tuners. 3 3 3 f (GHz) 24 24 24 VCC (V) PL (W) >1.3; typ. 1.8 >2.5; typ. 3.0 >4.5; typ. 5.5 Gpo (dB) >8; typ. 9.5 >8; typ. 9.5 >8; typ. 9.5 C (%) >35; typ. 45 >35; typ. 45 >35; typ. 45
1997 Feb 18
5
Philips Semiconductors
Product specification
NPN microwave power transistors
PTB32001X; PTB32003X; PTB32005X
handbook, full pagewidth
input
,, ,, , ,, ,,,,,,,,,,,,,,,,, ,, ,,,,,,,,,,, ,,, , ,, ,, ,, ,,,,,,,,,,,,,,,, ,, , ,, ,, ,, ,,, ,,
4 2 3.7 0.8 2.2 10 4 8 100 pF (ATC) 30 19.3 30
MSA115
output
Dimensions in mm. Thickness: 0.8 mm. Permittivity: r = 2.55. Substrate: circuits on a double copper-clad printed-circuit board Teflon fibreglass dielectric.
Fig.5 Prematching test circuit board for PTB32001X.
handbook, full pagewidth
input
,, , ,,,,,,,, ,, , ,,,,,,,, ,, ,, , ,,,,,,,, , ,, ,,,,,,,, , ,, ,,,,,,,, ,
2.3 0.8 17.4 9.4 3.1 30
10.5
,, ,, ,, , ,,,,,,,, ,, ,,,,,,,, , ,, ,,,,,,,,
8.8 2.3 100 pF (ATC) 3.8
MSA116
output
14.8 30
2.3
Dimensions in mm. Thickness: 0.8 mm. Permittivity: r = 2.55. Substrate: circuits on a double copper-clad printed board Teflon fibre glass dielectric.
Fig.6 Prematching test circuit board for PTB32003X.
1997 Feb 18
6
Philips Semiconductors
Product specification
NPN microwave power transistors
PTB32001X; PTB32003X; PTB32005X
handbook, full pagewidth
input
,, ,,,,,,,, ,, ,,,,,,,, ,, ,
7.3 2 0.5 3.9 0.5 4.2 8 8 8.3 1.5 30
14.2
,, ,, ,,,,,,, ,,,,,,, , ,, ,,,,,,, , ,, ,, ,,,,,,,
2.2 12.4 100 pF (ATC) 6.5 9.8 9.7 30
MSA117
output
4
Dimensions in mm. Thickness: 0.8 mm. Permittivity: r = 2.55. Substrate: circuits on a double copper-clad printed board Teflon fibreglass dielectric.
Fig.7 Prematching test circuit board for PTB32005X.
1997 Feb 18
7
Philips Semiconductors
Product specification
NPN microwave power transistors
PACKAGE OUTLINE
PTB32001X; PTB32003X; PTB32005X
handbook, full pagewidth
0.1 3.45 2.90 3 20.5 max seating plane 1.0 1 O 0.25 M 4.5 min 0.25 M 4.5 max
1.7 max
3.2 2.9
5.1
5.5 max
3.4 2 2.0 7.1 14.2
(1)
4.5 min
MBC888
(1) Flatness of this area ensures full thermal contact with bolt head. Dimensions in mm. Torque on screws: max. 0.5 Nm. Recommended screw: M2.5.
Fig.8 SOT440A.
1997 Feb 18
8
Philips Semiconductors
Product specification
NPN microwave power transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
PTB32001X; PTB32003X; PTB32005X
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Feb 18
9
Philips Semiconductors
Product specification
NPN microwave power transistors
NOTES
PTB32001X; PTB32003X; PTB32005X
1997 Feb 18
10
Philips Semiconductors
Product specification
NPN microwave power transistors
NOTES
PTB32001X; PTB32003X; PTB32005X
1997 Feb 18
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 18
Document order number:
9397 750 01734

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